Samsung Electronics has started production of a new high performance NAND flash memory chip which can transmit data at a faster speed than any other similar component available on the market. The new NAND flash chip features a 64GB density and is equipped with a toggle DDR 2.0 interface, allowing it to transmit data at a bandwidth of up to 400Mbps.
This new memory chip can transmit data approximately 10 times faster than current NAND flash technology. Existing SDR (single data rate) flash memories and Toggle DDR 1.0 products are around 40Mbps and 133Mps respectively.
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“With this 20nm-class, 64Gb, toggle DDR 2.0 NAND, Samsung is leading the market, which is evolving to fourth-generation smartphones and SATA 6Gbps SSDs,” said Wanhoon Hong, Executive Vice President, Memory Sales and Marketing, Samsung Electronics.
“We will continue to aggressively develop the world’s most advanced toggle DDR NAND flash solutions with higher performance and density, since we see them as vital to enabling a greater diversity of services for mobile phone users worldwide.”
Samsung hopes that his new technology will be widely adopted by smartphones, tablet computers and solid state drives (SSDs). As consumers use smartphones and tablets for longer periods of time and data is transferred frequently between devices, the need for faster, more efficient chips is vital.
